2005. 10. 24 1/6 semiconductor technical data khb1D0N60D/i n channel mos field effect transistor revision no : 1 general description this planar stripe mosfet has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. it is mainly suitable for electronic ballast and switching mode power supplies. features v dss = 600v, i d = 1.0a drain-source on resistance : r ds(on) =12 @v gs = 10v qg(typ.) = 5.9nc maximum rating (ta=25 ) * : drain current limited by maximum junction temperature. g d s characteristic symbol rating unit khb1D0N60D khb1d0n60i drain-source voltage v dss 600 v gate-source voltage v gss 30 v drain current @t c =25 i d 1.0 1.0* a @t c =100 0.57 0.57* pulsed (note1) i dp 3.0 3.0* single pulsed avalanche energy (note 2) e as 50 mj repetitive avalanche energy (note 1) e ar 2.8 mj peak diode recovery dv/dt (note 3) dv/dt 5.5 v/ns drain power dissipation ta=25 p d 28 28 w derate above 25 0.22 0.22 w/ maximum junction temperature t j 150 storage temperature range t stg -55 150 thermal characteristics thermal resistance, junction-to-case r thjc 4.53 4.53 /w thermal resistance, case-to-sink r thcs 50 50 /w thermal resistance, junction-to- ambient r thja 110 110 /w dpak dim millimeters a a b b c c d d f ff h h i i j j k k l l 6.6 0.2 6.1 0.2 5.34 0.3 0.7 0.2 2.7 0.2 2.3 0.2 0.96 max 2.3 0.1 0.5 0.1 1.5 0.5 0.1 e e 0.8 0.1 m m 0.55 min o o 123 1. gate 2. drain 3. source 1.02 0.2 p p q q + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 0.8 0.2 + _ dim millimeters ipak-s 123 a a b b c c d d e e f ff g g h h i i j j l l 6.6 0.2 6.1 0.2 5.34 0.3 0.7 0.2 9.3 0.3 2.3 0.2 0.76 0.1 0.96 max 2.3 0.1 0.5 0.1 0.5 0.1 1.0 0.1 1.5 1. gate 2. drain 3. source k m m o n o n k 1.8 0.2 + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ + _ 1.02 0.3 free datasheet http://
2005. 10. 24 2/6 khb1D0N60D/i revision no : 1 electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 a, v gs =0v 600 - - v breakdown voltage temperature coefficient bv dss / t j i d =250 a, referenced to 25 - 0.65 - v/ drain cut-off current i dss v ds =600v, v gs =0v, - - 10 a gate threshold voltage v th v ds =v gs , i d =250 a 2.0 - 4.0 v gate leakage current i gss v gs = 30v, v ds =0v - - 100 na drain-source on resistance r ds(on) v gs =10v, i d =0.5a - 9.7 12 dynamic total gate charge q g v ds =480v, i d =1.0a v gs =10v (note4,5) - 5.9 7.7 nc gate-source charge q gs - 1.0 - gate-drain charge q gd - 2.7 - turn-on delay time t d(on) v dd =300v r l =300 r g =25 (note4,5) - 14 40 ns turn-on rise time t r - 45 100 turn-off delay time t d(off) - 25 60 turn-off fall time t f - 35 80 input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz - 165 215 pf reverse transfer capacitance c rss - 3.6 4.7 output capacitance c oss - 18 25 source-drain diode ratings continuous source current i s v gs 2005. 10. 24 3/6 khb1D0N60D/i revision no : 1 normalized threshold voltage v th gate - source voltage v gs (v) i d - v ds drain - source voltage v ds (v) drain current i d (a) 10 -1 10 0 10 1 10 -1 10 0 10 1 10 0 10 -1 68 410 2 i d - v gs v th - t j r ds(on) - i d r ds(on) - t j -100 -50 0.0 0.5 1.5 1.0 050 100 150 drain current i d (a) drain current i d (a) on - resistance r ds(on) ( ? ) i s - v sd 0.2 0.4 0.8 1.0 1.2 1.4 1.6 0.6 reverse drain current i s (a) junction temperture t j ( ) 0 0 50 40 20 10 30 0.0 0.9 2.7 1.5 2.1 0.3 1.2 2.4 1.8 50 -100 -50 100 150 normalized on resistance v gs = 20v v gs = 10v junction temperature tj ( ) c source - drain voltage v sd (v) 0.0 0.5 2.5 1.0 1.5 2.0 c 25 c 1 50 c 150 c 25 c -55 c v gs = 0v i ds = 250 v gs = 10v i ds = 1.0a 10 0 10 -1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v 5.5 v 5.0 v free datasheet http://
2005. 10. 24 4/6 khb1D0N60D/i revision no : 1 drain current i d (a) gate - charge q g (nc) c - v ds drain - source voltage v ds (v) drain - source voltage v ds (v) 0 12 10 6 2 4 8 2 7 6 5 1 4 3 0 q g - v gs safe operation area capacitance (pf) gate - source voltage v gs (v) 0 100 300 200 10 0 10 1 10 -1 10 0 10 1 10 -1 10 -2 10 -1 10 0 10 1 10 2 c c oss c iss c rss frequency = 1mhz dc 10 s 1 s 100 s junction temperature t j ( ) 0.0 1.0 0.6 0.2 0.4 0.8 75 150 125 50 100 25 drain current i d (a) v ds = 120v v ds = 300v v ds = 480v square wave pulse duration (sec) 10 -5 10 -3 10 -2 10 -1 10 0 10 1 10 -4 10 -2 10 -1 10 0 - duty factor, d= t 1 /t 2 t j(max) - t c - r thjc = p d t 1 t 2 p dm single pulse dut y=0.5 0.2 0.1 0.05 0 .02 0.01 r th normalized transient thermal resistance i d - t j i d =1.0a t c = 25 t j = 150 single nonrepetitive pulse c c operation in this area is limited by r ds(on) free datasheet http://
2005. 10. 24 5/6 khb1D0N60D/i revision no : 1 - gate charge i d i d v ds v gs v gs v ds v gs 1.0 ma 0.8 x v dss 0.5 x v dss fast recovery diode 10v 10 v 25 ? r l q g q gd q gs q t p - resistive load switching - single pulsed avalanche energy v ds (t) i d (t) v ds v gs 50v 10 v 25 ? l time e as = li as 2 bv dss - v dd bv dss 1 2 v dd i as bv dss v ds v gs t r t d(off) t off t d(on) t on t f 10% 90% free datasheet http://
2005. 10. 24 6/6 khb1D0N60D/i revision no : 1 - source - drain diode reverse recovery and dv /dt i f i s v ds v sd 0.8 x v dss i sd (dut) v ds (dut) v gs 10v driver dut body diode recovery dv/dt body diode forword voltage drop body diode forword current body diode reverse current di/dt v dd i rm free datasheet http://
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